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| 2SK3312 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (--MOSV) 2SK3312 Chopper Regulator, DC-DC Converter and Motor Drive Applications Low drain-source ON resistance High forward transfer admittance Enhancement mode : RDS (ON) = 0.9 (typ.) : |Yfs| = 3.5 S (typ.) Unit: mm Low leakage current : IDSS = 100 A (max) (VDS = 600 V) : Vth = 3.0~5.0 V (VDS = 10 V, ID = 1 mA) Absolute Maximum Ratings (Ta = 25C) Characteristics Drain-source voltage Drain-gate voltage (RGS = 20 k) Gate-source voltage Drain current DC (Note 1) Symbol VDSS VDGR VGSS ID IDP PD EAS IAR EAR Tch Tstg Rating 600 600 30 6 24 65 345 6 6.5 150 -55~150 Unit V V V A A W mJ A mJ C C Pulse (Note 1) Drain power dissipation (Tc = 25C) Single pulse avalanche energy (Note 2) Avalanche current Repetitive avalanche energy (Note 3) Channel temperature Storage temperature range JEDEC JEITA TOSHIBA 2-10S1B Weight: 1.5 g (typ.) Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Thermal Characteristics Characteristics Thermal resistance, channel to case Thermal resistance, channel to ambient Symbol Rth (ch-c) Rth (ch-a) Max 1.92 83.3 Unit C / W C / W JEDEC JEITA TOSHIBA 2-10S2B Note 1: Ensure that the channel temperature does not exceed 150C. Note 2: VDD = 90 V, Tch = 25C (initial), L = 16.8 mH, RG = 25 , IAR = 6 A Note 3: Repetitive rating: pulse width limited by maximum channel temperature This transistor is an electrostatic-sensitive device. Please handle with caution. Weight: 1.5 g (typ.) 1 2006-11-08 2SK3312 Electrical Characteristics (Ta = 25C) Characteristics Gate leakage current Gate-source breakdown voltage Drain cut-off current Drain-source breakdown voltage Gate threshold voltage Drain-source ON resistance Forward transfer admittance Input capacitance Reverse transfer capacitance Output capacitance Rise time Symbol IGSS V (BR) GSS IDSS V (BR) DSS Vth RDS (ON) |Yfs| Ciss Crss Coss tr ton tf toff Qg Qgs Qgd VDD 400 V, VGS = 10 V, ID = 6 A VDS = 10 V, VGS = 0 V, f = 1 MHz Test Condition VGS = 25 V, VDS = 0 V IG = 10 A, VDS = 0 V VDS = 600 V, VGS = 0 V ID = 10 mA, VGS = 0 V VDS = 10 V, ID = 1 mA VGS = 10 V, ID = 3 A VDS = 10 V, ID = 3 A Min -- 30 -- 600 3.0 -- 1.2 -- -- -- -- Typ. -- -- -- -- -- 0.9 3.5 1000 8 110 15 Max 10 -- 100 -- 5.0 1.25 -- -- -- -- -- pF Unit A V A V V S Turn-on time Switching time Fall time -- 30 -- ns -- 10 -- Turn-off time Total gate charge (gate-source plus gate-drain) Gate-source charge Gate-drain ("miller") Charge -- -- -- -- 55 21 12 9 -- -- -- -- nC Source-Drain Ratings and Characteristics (Ta = 25C) Characteristics Continuous drain reverse current (Note 1) Pulse drain reverse current (Note 1) Forward voltage (diode) Reverse recovery time Reverse recovery charge Symbol IDR IDRP VDSF trr Qrr IDR = 6 A, VGS = 0 V IDR = 6 A, VGS = 0 V, dIDR / dt = 100 A / s Test Condition -- -- Min -- -- -- -- -- Typ. -- -- -- 1000 7 Max 6 24 -1.7 -- -- Unit A A V ns C Marking K3312 Part No. (or abbreviation code) Lot No. A line indicates lead (Pb)-free package or lead (Pb)-free finish. 2 2006-11-08 2SK3312 ID - VDS ID - VDS C O M M O N SO U R C E T c=25 P U LS E T E S T 5 15 10 10 7.25 15 10 7.75 7.5 C O M M O N SO U R C E T c=25 P U LS E T E S T (A) DRAIN CURRENT ID 7.0 3 6.75 6.5 6.25 1 6.0 DRAIN CURRENT ID (A) 4 8 6 7.25 7.0 6.75 6.5 2 4 2 VGS=5.5V 0 0 2 4 6 VDS VGS=6.0V 0 8 (V) 10 0 10 20 30 VDS 40 (V) 50 DRAINSOURCE VOLTAGE DRAIN-SOURCE VOLTAGE ID - VGS 10 VDS - VGS C O M M O N SO U R C E V D S =20V 20 VDS (V) C O M M O N SO U R C E T c=25 P U LS E T E S T DRAIN CURRENT ID (A) 8 P U LS E T E S T 16 6 DRAIN-SOURCE VOLTAGE 12 8 4 25 Tc=-55 ID=6A 3 1.5 2 100 4 0 0 0 2 4 6 VGS 8 (V) 10 0 4 8 12 VGS 16 (V) 20 GATE-SOURCE VOLTAGE GATE-SOURCE VOLTAGE Yfs - ID 100 FORWARD TRANSFER ADMITANCE Yfs (S) C O M M O N SO U R C E 10 DRAIN-SOURCE ON RESISTANCE RDS (ON) () RDS (ON) - ID C O M M O N SO U R C E T c=25 P U LS E T E S T V D S =20V P U LS E T E S T 10 TC=-55 25 100 1 VGS=10,15V 1 0.1 0.1 1 10 (A) 0.1 100 0.1 1 DRAIN CURRENT ID (A) 10 DRAIN CURRENT ID 3 2006-11-08 2SK3312 RDS (ON) - Tc IDR - VDS 5 DRAIN-SOURCE ON RESISTANCE RDS (ON) ( ) C O M M O N SO U R C E V G S =10V 10 C O M M O N SO U R C E T c=25 P U LS E T E S T 3 ID =6A 3 1.5 DRAIN REVERSE CURRENT IDR (A) 4 P U LS E T E S T 1 2 1 10 5 0 -80 -40 0 40 80 Tc 3 1 VGS =0,-1V 0.1 120 (C) 160 0 -0.2 -0.4 -0.6 -0.8 VDS -1 (V) -1.2 CASE TEMPERATURE DRAIN--SOURCE VOLTAGE CAPACITANCE - VDS 10000 Ciss Vth - Tc 6 GATE THRESHOLD VOLTAGE Vth (V) COMMON SOURCE V DS=10V ID =1mA PULSE TEST (pF) 5 4 3 2 1 0 1000 CAPACITANCE C 100 Coss 10 COMMON SOURCE V GS=0V f=1MHz Tc=25 Crss 1 0.1 1 10 VDS (V) 100 -80 -40 0 40 80 Tc 120 (C) 160 DRAIN-SOURCE VOLTAGE CASE TEMPERATURE PD Tc VDS (V) DYNAMIC INPUT/OUTPUT CHARACTERISTICS (V) GATE-SOURCE VOLTAGE VGS 100 DRAIN POWER DISSIPATION PD (W) 500 400 300 200 VDS C O M M O N SO U R C E I = 6A D T c= 25 P U LS E T E S T 20 16 12 8 80 60 40 20 0 0 40 80 120 Tc DRAIN-SOURCE VOLTAGE 180 180 VDD=90V 360 VGS 100 0 0 10 20 Qg 4 0 160 (C) 200 30 (nC) CASE TEMPERATURE TOTAL GATE CHARGE 4 2006-11-08 2SK3312 RG = 25 VDD = 90 V, L = 16.8 mH EAS = B VDSS 1 L I2 2 B VDSS - VDD 5 2006-11-08 2SK3312 RESTRICTIONS ON PRODUCT USE * The information contained herein is subject to change without notice. 20070701-EN * TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the "Handling Guide for Semiconductor Devices," or "TOSHIBA Semiconductor Reliability Handbook" etc. * The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury ("Unintended Usage"). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his document shall be made at the customer's own risk. * The products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations. * The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patents or other rights of TOSHIBA or the third parties. * Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations. 6 2006-11-08 |
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